From SLC to QLC, NAND flash has evolved with increasing storage density, yet decreasing lifespan and reliability, with P/E (Program/Erase) cycles being a critical measure, diminishing over time.
According to Wikipedia, SLC flash can achieve up to 5000-10000 P/E cycles, MLC generally ranges from 1000-10000 cycles, and TLC currently maxes out at around 3000 cycles, while QLC typically stays under 1000 cycles.
However, Yangtze Memory, leveraging its unique and excellent Xtacking architecture design, has embarked on its distinctive path, significantly enhancing flash memory lifespan and reliability.
For instance, Yangtze Memory's next-generation QLC 3D NAND flash, internally codenamed "X3-6070," boasts outstanding qualities, meeting the application demands of enterprise, consumer, and embedded scenarios comprehensively.
According to official specifications, the IO interface transmission speed of Yangtze Memory's X3-6070 QLC flash reaches 2400MT/s, a whopping 50% increase from the previous generation's 1600MT/s. Moreover, both read and write speeds have seen nearly a 100% improvement.
Even more incredible is its reliability and lifespan, with a remarkable P/E cycle of 4000 times, four times that of regular QLC flash.
According to Yangtze Memory staff, the reason behind the impressive performance lies partly in the unique Xtacking architecture and partly in the maturation of processes and technologies.
Of course, not all QLC can reach such high levels. It depends on specific quality and yield rates, as well as the application field. For instance, QLC used in enterprise-grade SSDs tends to have a longer lifespan.
Take for example the Ti600 released by Changjiang Storage in September last year. It's the company's first SSD product to utilize QLC flash memory, targeting the consumer market. Its performance can rival high-end PCIe 4.0 SSDs.
The specific P/E cycles aren't disclosed. Considering that write amplification for such products generally ranges from 3 to 5 times, plus factors like firmware algorithms, the Ti600 SSD likely offers around 2000 P/E cycles, roughly double that of typical QLC, making it quite reliable.
Additionally, the Ti600 1TB version boasts a maximum write endurance of up to 400TBW. Based on a five-year warranty period, that averages out to around 219GB per day, fully meeting the needs of consumer-level users.
It's worth noting that in the OEM realm, Yangtze Memory Technologies' next-generation PC41Q SSD will also incorporate QLC, suitable for laptops, desktops, all-in-one PCs, and similar devices.
Featuring PCIe 4.0 x4 and NVMe 1.4 support, it offers read/write bandwidth of 5.5GB/s, with dynamic power consumption under 4W and PS4 standby power consumption below 2mW.
Its reliability and data retention capabilities are comparable to TLC flash memory, with an average time between failures reaching 2 million hours and the ability to reliably store data for up to a year in a 30℃ environment.
QLC flash memory has indeed reached a stage where widespread adoption is feasible, especially with Yangtze Memory Technologies' QLC, making it suitable for both ordinary consumers and enterprise-level customers, with no concerns regarding performance or lifespan.
