On May 25th, a netizen asked a chip expert about the Snapdragon 8 Gen4: Will it avoid the heating issues seen in the Snapdragon 888?
In response, the chip expert stated: The Snapdragon 8 Gen4 uses TSMC's 3nm process, not Samsung's.
It is well known that the Snapdragon 888 faced widespread overheating problems, with blame initially placed on Samsung's 5nm process.
Due to Apple occupying a significant portion of TSMC's 5nm production capacity at the time, Qualcomm had to settle for Samsung as their manufacturing partner.
The Snapdragon 888, the first chip to use Samsung's 5nm process, is said to have heating issues related to the Samsung 5nm process.
According to a digital blogger's evaluation, after experiencing the same gaming conditions, the average chip power consumption of the Kirin 9000 and Apple A14, both using TSMC's 5nm chips, is 2.9W and 2.4W respectively, while the Snapdragon 888 using Samsung's 5nm technology is at 4.0W.
In terms of transistor density, TSMC's 5nm process can reach 173 million transistors, while Samsung's process lags behind, with only 127 million transistors in its 5nm process.
Due to Samsung's process issues, starting from the Snapdragon 8+ Gen1, Qualcomm has turned to TSMC for manufacturing. Flagship platforms like Snapdragon 8+ Gen1, Snapdragon 8 Gen2, Snapdragon 8 Gen3 have all chosen TSMC for production, showing good market performance.
The upcoming Snapdragon 8 Gen4, set to debut in October this year, will also be manufactured by TSMC, marking the first time using TSMC's 3nm process technology.
According to leaks, the Qualcomm Snapdragon 8 Gen4 will use TSMC's latest 3nm process N3E, which addresses various defects from N3B, with relaxed design specifications. Compared to N5 at the same power consumption, performance is expected to increase by 15-20%, with a 30-35% reduction in power consumption for the same performance, approximately 1.6 times logic density, and 1.3 times chip density. Its performance is highly anticipated.
