Samsung is set to commence mass production of its ninth-generation V-NAND flash memory later this month, boasting a stack of up to 290 layers, representing an increase of less than 23% compared to the current 236-layer design.
This new flash memory iteration will employ a novel stacking architecture, with a CMOS layer and logic circuits at the bottom, followed by 145 layers of flash arrays, and another 145 layers of flash arrays on top.
While this method may be more intricate, it ensures a high yield rate for quality products and allows for easy scalability.
According to Samsung's roadmap, mass production of the tenth-generation V-NAND, stacked up to 430 layers, is slated for the latter half of 2025.
In the more distant future, Samsung could potentially achieve 1000 layers around 2030.
Meanwhile, China's Yangtze Memory Technology Corporation aims to commence mass production of 300-layer flash memory in the latter half of this year, while SK Hynix plans to do so with 321 layers early next year. Additionally, Kioxia claims it will achieve mass production of over 1000 layers by 2031!
