Recently, Professor Ren Wei and his team from the School of Electronic Engineering at the Department of Telecommunications, Xi'an Jiaotong University, utilized a photodetector based on MoS2 channel and epitaxial ferroelectric HZO thin-film gate dielectric to achieve high responsivity photodetection. Their research findings were published in Advanced Functional Materials.
The study conducted experiments optimizing the back-gated structure and Schottky barrier for 650nm wavelength photodetection, resulting in excellent photodetection performance. By employing epitaxial hafnium-based ferroelectric thin films, which possess good compatibility with semiconductor silicon processes and high consistency in ferroelectric domain orientation, the team improved device performance and investigated important physical phenomena, including bipolar electrical behavior and negative photoconductivity.
Building upon the characterization of MoS2 material properties, as well as device electrical and optoelectronic characteristics, the research team elucidated the reasons behind the ferroelectric modulation of MoS2 photodetectors. The experiments also observed a high responsivity negative photoconductivity of -8.44×103A W-1, which holds significant implications for detecting extremely weak light.
Related Paper: https://doi.org/10.1002/adfm.202402185
