Exploring hardware-based encryption methods is one way to enhance data security. Memristors, known for their robust logic computing abilities, higher integration density, and ultra-low power consumption, are considered among the most promising next-generation electronic devices. The team led by Professor Shao Jinyou and Professor Sun Bai from the Institute of Frontier Science and Technology at Xi'an Jiaotong University has successfully developed a memristor with a Cu/PEDOT:PSS-PP:PVDF/Ti structure. This was achieved by using a heterojunction dielectric layer made of poly(vinylidene fluoride) (PVDF) doped with papaya skin (PP) and organic poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The research findings were recently published in the journal Advanced Functional Materials.
Memristors are hailed as one of the most promising next-generation electronic devices, boasting formidable logical computing capabilities, higher integration density, and extremely low power consumption. Through the manipulation of voltage biasing/scanning rates, this study successfully achieved toggling of the device between resistive switching, self-rectifying effects, and capacitive behaviors. By further fitting data and simulating interfacial group reactions, the research innovatively proposed a device charge conduction mode driven by Fowler-Nordheim tunneling, coordination reactions, and PEDOT:PSS hole removal. Finally, conventional logic gates and adder circuits were constructed based on the designed memristor, and a hardware encryption unit entirely based on the adder was devised, enabling data encryption and image reconstruction. This work renders memristors compatible with logic circuits, paving a path towards data encryption and information security.
The device has successfully achieved toggling between resistive switching, self-rectifying effects, and capacitive behaviors. (Images provided by the research group)
Related paper information: https://doi.org/10.1002/adfm.202401132
